Resonance Raman Spectroscopy of Silicene and Germanene
Publication Date (Web): December 26, 2018
Thanks to the Editor for his Boxing day effort.
We model Raman processes in silicene and germanene involving scattering of quasiparticles by either two phonons or one phonon and one point defect. We use our model to predict scattering cross sections for defect-induced Raman scattering involving adatoms, substitutional impurities, Stone–Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response.
